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BPWin 4.58 features new NAND Flash options that will allow users to customize multiple partitions using a single algorithm when programming NAND devices.

Special Spare Area calculations can be added as needed without having to change the algorithm. The user can specify partitions with an arbitrary number of required addresses and specify how they align to the buffer. This feature is available to all NAND Flash devices that support it.

NAND Flash is used in numerous applications that involve the data file to be partitioned. For instance, the file may consist of an initial bootloader, followed by a bootup image, and data partitions. Depending on the application, each partition has a logical address to which it must map for correct functionality. Due to the presence of bad blocks, data on a device can shift, in terms of the actual address, to which it is programmed. It becomes essential that the algorithm used to program the NAND Flash guarantees that each partition starts at the exact specified logical address on the device. NAND Flash options in the BPWin software allow for this functionality.

Spare Area schemes allow fills or ECC (Error Correction Code) calculations “on the fly” during programming and verifying without modifying the buffer.

BP Microsystems, bpmicro.com

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