NORWOOD, MA -- A new low-loss flip-chip package is said to provide an efficient, cost-effective chip-scale solution for power devices.

The new package, developed by Remtec, is for Si, SiC and GaN FET transistors -- including Mosfets and eGAN transistors. Using its PCTF technology, Remtec reportedly maintains low DC resistance thick copper traces and copper-plated vias in ceramics (less than 1 mΩ) to maintain minimal DC losses and inductance. The package is said to permit higher than 20 AMP current capability and faster switching times.

Switching speeds of power Mosfets are reduced from 3ns to 1ns, Remtec said. Moreover, the package reduces footprint by four to six times.